FERDIANSJAH; ANUNG, Muharini. Improvement of Ni/4H-SiC/Ti Schottky Diode Characteristic Post Annealing Process. JMECS (Journal of Measurements, Electronics, Communications, and Systems), [S. l.], v. 11, n. 2, p. 27–34, 2024. DOI: 10.25124/jmecs.v11i2.8569. Disponível em: https://journals.telkomuniversity.ac.id/jmecs/article/view/8569. Acesso em: 20 feb. 2026.